KAWASAKI, Japan, Sept 25 (Bernama-BUSINESS WIRE) — Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “TPH2R70AR5,” a 100V N-channel power MOSFET fabricated with U-MOS11-H, Toshiba’s latest-generation process[1]. The MOSFET targets applications such as switched-mode power supplies for industrial equipment used in data centers and communications base stations. Shipments start today.
The 100V U-MOS11-H series improves on the drain-source On-resistance (RDS(ON)), total gate charge (Qg) and the trade-off between them (RDS(ON) × Qg) delivered by Toshiba’s existing generation process, the U-MOSX-H series, reducing both conduction and switching power losses.
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