KAWASAKI, Japan, Nov 12 (Bernama-BUSINESS WIRE) — Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed “X5M007E120,” a bare die¹ 1200V silicon carbide (SiC) MOSFET for automotive traction inverters² with an innovative structure that deliver both low On-resistance and high reliability. Test samples are now shipping, for evaluation by customers.
