Toshiba Starts Test-Sample Shipments of a Bare Die 1200V SiC MOSFET with Low On-Resistance and High Reliability, for Use in Automotive Traction Inverters

KAWASAKI, Japan, Nov 12 (Bernama-BUSINESS WIRE) — Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed “X5M007E120,” a bare die^¹ 1200V silicon carbide (SiC) MOSFET for automotive traction inverters^² with an innovative structure that deliver both low On-resistance and high reliability. Test samples are now shipping, for evaluation by customers.

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