Toshiba Develops Industry’s First 2200V Dual Silicon Carbide(SiC) MOSFET Module That Contributes to High Efficiency and Downsizing of Industrial Equipment
KAWASAKI, Japan, Aug 29 (Bernama-BUSINESS WIRE) — Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed “MG250YD2YMS3,” the industry’s first[1] 2200V dual silicon carbide (SiC) MOSFET module for industrial equipment. The new module has a drain current (DC) rating of 250A and uses the company’s third generation SiC MOSFET chips. It is suitable…

