Toshiba Releases 650V 3rd Generation SiC MOSFETs in DFN8x8 Package
KAWASAKI, Japan, May 20 (Bernama-BUSINESS WIRE) — Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched four 650V silicon carbide (SiC) MOSFETs, equipped with its latest[1] 3rd generation SiC MOSFET chips and housed in a compact DFN8x8 package, suitable for industrial equipment, such as switched-mode power supplies and power conditioners for photovoltaic generators. Volume…

